From: Pulsed bias effect on roughness of TiO2:Nb films deposited by grid assisted magnetron sputtering
Variable | Value |
---|---|
Deposition time | 30 min. |
Substrate temperature | 300°C |
Substrate bias | -100 V |
Target voltage | -400 V |
Target current | 1.0 A |
Oxygen mass flow rate | 2.2 sccm |
Argon mass flow rate | 2.6 sccm |
Base pressure | 10-5 Torr |
Working pressure | 3 mTorr |