Fig. 4
From: Wetting and adhesion properties of quasicrystals and complex metallic alloys
Partial density of Al 3p states (Al3p DOS) measured in fcc aluminium compared to the one found in the i-ACF quasicrystal. In this later compound, the Al3p DOS is shifted toward higher binding energies (δ at half maximum, Δ at maximum) due to the formation of a pseudo-gap at the Fermi energy (EF) set to zero binding energy. As a consequence, the number n(EF) of Al3p states at EF is reduced compared to that in fcc Al, for which n(EF) is by definition of the Fermi–Dirac distribution for a free electron system taken equal to 0.5 when the maximum of the DOS is normalized to 1